SMF05CT1G, SMF12CT1G, SMF15CT1G, SMF24CT1G, SZSMF12CT1G
SMF05CT1G ELECTRICAL CHARACTERISTICS (T J = 25 ? C unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
5.0
Unit
V
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
V BR
I R
V C
V C
I PP
C J
I T = 1 mA, (Note 3)
V RWM = 5 V
I PP = 5 A (8 x 20 m s Waveform)
I PP = 8 A (8 x 20 m s Waveform)
8 x 20 m s Waveform
V R = 0 V, f = 1 MHz (Line to GND)
6.2
0.07
80
7.2
5.0
9.8
12.5
8.0
130
V
m A
V
V
A
pF
SMF12CT1G ELECTRICAL CHARACTERISTICS (T J = 25 ? C unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
12
Unit
V
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
V BR
I R
V C
V C
I PP
C J
I T = 1 mA, (Note 3)
V RWM = 12 V
I PP = 3 A (8 x 20 m s Waveform)
I PP = 6 A (8 x 20 m s Waveform)
8 x 20 m s Waveform
V R = 0 V, f = 1 MHz (Line to GND)
13.3
0.01
40
15
0.1
21
23
6.0
60
V
m A
V
V
A
pF
SMF15CT1G ELECTRICAL CHARACTERISTICS (T J = 25 ? C, unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
15
Unit
V
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
V BR
I R
V C
V C
I PP
C J
I T = 1 mA, (Note 3)
V RWM = 15 V
I PP = 1 A (8 x 20 m s Waveform)
I PP = 5 A (8 x 20 m s Waveform)
8 x 20 m s Waveform
V R = 0 V, f = 1 MHz (Line to GND)
17
0.01
33
19
1.0
23
29
5.0
45
V
m A
V
V
A
pF
SMF24CT1G ELECTRICAL CHARACTERISTICS (T J = 25 ? C, unless otherwise specified)
Parameter
Reverse Working Voltage
Symbol
V RWM
(Note 2)
Conditions
Min
Typ
Max
24
Unit
V
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
V BR
I R
V C
V C
I PP
C J
I T = 1 mA, (Note 3)
V RWM = 24 V
I PP = 1 A (8 x 20 m s Waveform)
I PP = 2.5 A (8 x 20 m s Waveform)
8 x 20 m s Waveform
V R = 0 V, f = 1 MHz (Line to GND)
26.7
0.01
21
32
1.0
40
44
2.5
25
V
m A
V
V
A
pF
2. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V BR is measured at pulse test current I T .
4. Include SZ-prefix devices where applicable.
http://onsemi.com
2
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相关代理商/技术参数
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SZSMF5.0AT1G 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:200 W Transient Voltage Suppressor SOD-123 Flat Lead Package
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SZ-SP1 制造商:Fuji Electric 功能描述: